| 摘要 |
PURPOSE: A fabrication method of capacitors is provided to simplify a manufacturing process and to improve a yield and a reliability by increasing a surface of a lower electrode. CONSTITUTION: After sequentially forming a first interlayer dielectric(33), a nitride(35) as an etch stopper and a first photoresist pattern on a semiconductor substrate(31), a first contact hole is formed by selectively etching the nitride(35) and first interlayer dielectric(33) using the first photoresist pattern as a mask. Then, a first polycrystalline silicon plug(37) is completely filled into the first contact hole. After forming a porous oxide(39) as a second interlayer dielectric and a second photoresist pattern, a lower electrode contact hole having a semispheric concave is formed by selectively etching the porous oxide(39) using the second photoresist pattern as a mask, thereby increasing the surface of the lower electrode.
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