| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent a BPSG(Boron Phosphor Silicate Glass) of a cell region from being etched, by protruding plugs through an entire surface etching. CONSTITUTION: Plugs(41) are formed by planarizing the second polycrystalline silicon layer, deposited on a semiconductor substrate(31) having a defined structure enough to fill first contact holes, using a BPSG(39) as an etch ending point. Then, the plugs(41) are protruded by selectively etching the BPSG(39) and the third photoresist(43) is then deposited on the resultant structure. At this time, the adhesive force between plugs(41) and the third photoresist(43) is increased by performing a thermal treatment, an E-beam processing, or an ultra-violet light processing on the third photoresist(43). After forming the third photoresist pattern, the BPSG(39) of a peripheral region is etched using the third photoresist pattern as a mask. At this time, the plugs(41) prevent an etchant penetration into the BPSG(39) of a cell region, thereby restraining a void.
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