| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to remove the high C-V(Capacitance-Voltage) hysteresis occurring on the capacitor of a MOS(Metal-Oxide-Silicon) structure using a high dielectric film. CONSTITUTION: A silicate is formed on a semiconductor substrate(1) and a gate insulation film(2) is formed on the surface. The gate insulation film is heat-treated at a temperature range of 500-1000 deg.C under a O2, N2, N2O, NO, UV-O3 or Ar atmosphere for 5-60 minutes, at the temperature range of 600-1000 deg.C under the O2, N2, N2O, NO, UV-O3 or vacuum atmosphere for 10-300 seconds by a rapid heat treatment, or at the temperature range of 700-1100 deg.C under the H2 and O2 atmosphere for 10-300 seconds by an ISSG(In-Situ Stream Generator) rapid heat treatment. An upper electrode(3) is formed on the gate insulation film. After forming a photoresist film on the upper electrode, a capacitor pattern is formed by successively etching the upper electrode and the gate insulation film.
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