Aluminiumnitrid-Sinterkörper, eingebetteter Metallgegenstand, Elektronikfunktionsmaterial und elektrostatische Einspannvorrichtung

摘要

In AlN crystal grains constituting a sintered body, is contained: 150 ppm - 0.5 wt.%, preferably at most 0.1 wt.%, of at least one rare earth element (as oxide thereof); at most 900 ppm, preferably at most 500 ppm of at least one metal impurity except rare earth elements; and preferably at least 0.5 wt.% of oxygen measured by an electron probe X-ray microanalyzer. The grains have an average grain diameter of preferably at least 3.0 mu m and show a main peak in the wavelength range of 350 - 370 nm of spectrum obtained by a cathode luminescence method. The sintered body composed of AlN crystal grains has a volume resistivity at room temperature of at most 1.0 x 10<12> OMEGA .cm.