| 发明名称 |
Resist compositions and patterning process |
| 摘要 |
A resist composition comprising an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl ester compound as a dissolution regulator has a high sensitivity, resolution, etching resistance and storage stability and lends itself to micropatterning with electron beams or deep-UV rays.
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| 申请公布号 |
US6413695(B1) |
申请公布日期 |
2002.07.02 |
| 申请号 |
US20000572973 |
申请日期 |
2000.05.18 |
| 申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
NISHI TSUNEHIRO;KINSHO TAKESHI;WATANABE TAKERU;HASEGAWA KOJI;NAKASHIMA MUTSUO;HATAKEYAMA JUN |
| 分类号 |
H01L21/027;C07C69/00;C07C69/013;G03F7/004;G03F7/038;G03F7/039;(IPC1-7):G03F7/004 |
主分类号 |
H01L21/027 |
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