SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor light emitting device and a manufacturing method thereof are provided to improve external quantum efficiency by removing debris remaining in an element in a scribing process. A semiconductor light emitting device includes a sapphire substrate(100). A buffer layer(200) is epitaxial-grown on a sapphire substrate. The n-type nitride semiconductor layer(300) is epitaxial-grown on the buffer layer. An active layer(400) is epitaxial-grown on the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(500) is epitaxial-grown on the active layer. A transparent electrode layer(600) is formed on the p-type nitride semiconductor layer. A p contact metal layer(700) is formed on the transparent electrode layer. An n contact metal layer is formed on the n-type nitride semiconductor layer in which the p-type nitride semiconductor layer and the active layer are mesa-etched and exposed.