发明名称 |
Diffusion barriers comprising a self-assembled monolayer |
摘要 |
The present invention provides a method for forming a diffusion barrier layer, a diffusion barrier in an integrated circuit and an integrated circuit. The method for forming a diffusion barrier involves the following steps: 1) preparing a silicon substrate; 2) contacting the silicon substrate with a composition comprising self-assembled monolayer subunits and a solvent; and, 3) removing the solvent. The diffusion barrier layer includes a self-assembled monolayer. The integrated circuit includes a silicon substrate, a diffusion barrier layer and a metal deposited on the diffusion barrier layer. The diffusion barrier layer in the integrated circuit is covalently attached to the silicon substrate and includes a self-assembled monolayer.
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申请公布号 |
US2002079487(A1) |
申请公布日期 |
2002.06.27 |
申请号 |
US20010976927 |
申请日期 |
2001.10.11 |
申请人 |
RAMANATH G.;KRISHNAMOORTHY AHILA;CHANDA KAUSHIK;MURARKA SHYAM P. |
发明人 |
RAMANATH G.;KRISHNAMOORTHY AHILA;CHANDA KAUSHIK;MURARKA SHYAM P. |
分类号 |
H01L21/312;H01L21/768;H01L23/532;(IPC1-7):H01L35/24 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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