发明名称 Semiconductor integrated-circuit device
摘要 To reduce current consumption in a sense amplifier circuit in a semiconductor integrated-circuit device, in particular, in a semiconductor integrated-circuit having a non-volatile memory as a memory element thereof. A Switching element for cutting off a direct current at the end of data reading from a memory is arranged in a path through which the direct current flows. In this way, the switching element cuts off the direct current at the moment of completion of the data reading from the memory, thereby substantially reducing current consumption.
申请公布号 US6411550(B1) 申请公布日期 2002.06.25
申请号 US20000628757 申请日期 2000.07.31
申请人 SEIKO EPSON CORPORATION 发明人 NASU HIROAKI
分类号 G11C16/06;G11C7/06;G11C16/26;G11C16/28;H03K19/0944;(IPC1-7):G11C16/06 主分类号 G11C16/06
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