| 摘要 |
<p>Applying heat and pressure to a backing film (3) comprising an adhesive layer (4) during the procedure of mounting it to a polish head (1) for use in chemical mechanical polishing (CMP), inhomogeneities inside the adhesive layer (4), e.g. thickness and compressibility variations or air bubbles (101), can easily be removed. A corresponding arrangement comprises a means for exerting a uniform pressure force (51), which can be a roller (51a) made of silicone or rubber, or a plate (51b), a means for heating (61) asnd a control unit (5) for controlling the heat and the pressure force. The backing film (3) installed using this Arrangement and method provides a uniform removal of material from the semiconductor wafer (2) surface and therefore advantageously increases the wafer yield.</p> |
