| 摘要 |
A stencil mask is manufactured by using a silicon-on-insulator substrate, which has a silicon base layer and an SOI layer formed on the silicon base layer via an embedded oxide film. A first resist film is formed on said silicon base layer, the first resist film having a desired resist pattern. The silicon base layer is removed by using said first resist film as a mask so as to expose the embedded oxide film and form a cavity part defined by the embedded oxide film and the sidewalls of the silicon base layer. The embedded oxide film is removed, and the first resist film is exfoliated. Then, a filling material is filled in the cavity part. A second resist film is formed on the SOI layer, and the SOI layer is removed by using the second resist film as a mask. |
