发明名称 Semiconductor structure including a conductive fuse and process for fabrication thereof
摘要 A semiconductor structure comprising a semiconductor substrate, an electrically conductive level on the substrate and a metal fuse located at the conductive level wherein the fuse comprises a self-aligned dielectric etch stop layer thereon is provided along with processes for its fabrication. <IMAGE>
申请公布号 EP0981161(A3) 申请公布日期 2002.06.12
申请号 EP19990304728 申请日期 1999.06.17
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;SIEMENS AKTIENGESELLSCHAFT 发明人 ARNDT, KENNETH C.;GAMBINO, JEFFREY P.;MANDELMA, JACK A.;NARAYAN, CHANDRASEKHAR;SCHNABEL, RAINES F.;SCHUTZ, RONALD J.;TOBBEN, DIRK
分类号 H01L21/82;H01L21/768;H01L23/525 主分类号 H01L21/82
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