发明名称 Dual chamber ion beam sputter deposition system
摘要 A dual chamber deposition system comprising two ion beam sputtering (IBS)deposition chambers connected by a wafer handler chamber for depositions of multilayer thin film structures with improved process throughput. Reactive ion beam sputtering depositions and metal layer depositions on a substrate may be carried out in separate IBS deposition chambers while maintaining vacuum conditions throughout the process. A process for ion beam sputter deposition of spin valve (SV) magnetoresistive sensor layers having an AFM layer formed of NiO where reactive sputtering deposition of the NiO is carried out in a separate IBS deposition chamber from the subsequent metal layer depositions improves system throughput while maintaining SV sensor performance. <IMAGE>
申请公布号 EP0959146(A3) 申请公布日期 2002.06.05
申请号 EP19990303187 申请日期 1999.04.23
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 PINARBASI, MUSTAFA
分类号 H01F41/18;C23C14/46;C23C14/56;G11B5/31;G11B5/39;H01F41/30;H01L43/12 主分类号 H01F41/18
代理机构 代理人
主权项
地址
您可能感兴趣的专利