| 发明名称 |
Novel way to remove Cu line damage after Cu CMP |
| 摘要 |
The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.
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| 申请公布号 |
US2002064971(A1) |
申请公布日期 |
2002.05.30 |
| 申请号 |
US20020043780 |
申请日期 |
2002.01.14 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
SHIH TSU;JWU JIH-CHURNG;CHEN YING-HO;JANG SYUN-MING |
| 分类号 |
B24B37/04;B24B49/14;B24B55/02;(IPC1-7):H01L21/00 |
主分类号 |
B24B37/04 |
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