| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus having a susceptor, with which uniformity of the temperature distribution within a surface of a semiconductor wafer (substrate) of a process target is enhanced. SOLUTION: A wafer W is supported by a wafer supporting member 54 so as to keep a gap having prescribed distances between the wafer W and a wafer heating face 52 in the wafer holding area 50 of the upper face of a susceptor 22. The distance in the gap from the wafer W to a first heating region 56 and that to a second heating region 58 are different from each other. Heating condition for the wafer W through the susceptor 22 is adjusted by the distance in the gap in each region of the wafer heating face 52. As a result, uniformity of the temperature distribution within the surface of the wafer W, and that of the thickness distribution of the film formed, can be enhanced.
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