| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a barrier layer for not passing through oxygen even in the case that the oxygen advances into the barrier layer in a high temperature environment for which an oxygen shielding effect is increased further compared to an existing oxygen barrier layer between a ferroelectric capacitor and a contact plug and the formation method. SOLUTION: This semiconductor is provided with an oxygen barrier pattern composed of the three layers of an oxygen barrier metal layer formed on an inter-layer insulation film including the contact plug, a material layer forming a conductive solid solution by the oxygen barrier metal layer and the oxygen and the oxygen barrier metal layer, and a capacitor provided with an electrode electrically connected to the oxygen barrier layer and a ferroelectric dielectric film. It is preferable that a contact layer between the oxygen barrier layer and the contact plug, and an iridium oxidized film between the oxygen barrier layer and a capacitor electrode, are provided.
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