| 摘要 |
PURPOSE: A polysilicon plug formation method of semiconductor devices is provided to improve a yield by effectively removing an etch residue. CONSTITUTION: By forming an isolation layer in a semiconductor substrate having cell and peripheral circuit regions, an active region is defined. Gate lines(25a,25b) are formed on the semiconductor substrate, and impurity regions are formed between the gate lines(25a,25b). A polysilicon plug(31) is formed in and selectively contacted to the impurity regions. An isolation removing region is formed at portions except for the polysilicon plug(31), thereby removing resultant etching residues. An ILD(Inter-Layer Dielectric)(35) is filled into the isolation removing region. At this time, key holes(36) are formed in the ILD(35) so as to reduce parasitic resistance.
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