| 摘要 |
A method of fabricating a semiconductor device has the steps of: forming a sacrificial layer having a first trench for exposing a first predetermined area of the substrate on the ESD protecting device region; forming a first impurity layer of a second conductivity type in the first predetermined area of the substrate on the ESD protecting region; patterning the sacrificial layer to form a second trench for exposing a second predetermined area of the substrate on the internal circuit device region and a third trench for exposing a third predetermined area of the substrate on the ESD protecting device region; forming a gate insulating layer on the exposed substrate, and then filling the first trench, the second trench and the third trench with a conductive layer which serves as a dummy gate electrode of the ESD protecting device, a gate electrode of the internal circuit device and a gate electrode of the ESD protecting device respectively; removing the sacrificial layer and then forming a second impurity layer of the second conductivity type in the exposed substrate at both sides of the gate electrodes and the dummy electrode respectively; and forming a silicide layer on the gate electrodes, the dummy gate electrode and the second impurity layer.
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