发明名称 |
Process for a high efficiency Class D microwave power amplifier operating in the S-Band |
摘要 |
A process and product providing a High Efficiency Microwave Power Amplifier (HEMPA) which propagates S-Band microwave frequency square waves; utilizing a program simulating FETs at high DC-to-RF efficiencies, which analyses linear elements of selected FETs in a frequency domain, and non-linear elements of the FETs in a time domain, and converts the time domain values into the frequency domain, and performs DC and S-parameter simulated measurements based on predefined data for each FET. Individual FET parameters are extracted and isolated by converting the S-parameters to admittance or impedance parameters to derive FET models for each FET, which the program uses to provide a final output of a HEMPA circuit based on iterative simulations of an amplification circuit utilizing microwave topology and frequencies. Iterative simulations of the amplification circuit analyze output values of a plurality of cascaded stages of the FETs, which are arranged in a push-pull configuration.
|
申请公布号 |
US6388512(B1) |
申请公布日期 |
2002.05.14 |
申请号 |
US20000707290 |
申请日期 |
2000.11.03 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
SIMS, III WILLIAM HERBERT |
分类号 |
G06F17/50;(IPC1-7):G01R19/00 |
主分类号 |
G06F17/50 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|