| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer where a crystal orientation is shifted between support-substrate and device-formation side wafers, and where there is no need for preparing two kinds of wafers, having different crystal orientations where notch and orientation flat have been added. SOLUTION: One of two semiconductor wafers, where the notch and orientation flat are added to the same crystal orientation <110>, is set to the support- substrate side wafer 1, and the other is set to the device-formation side wafer. While the notch and orientation flat are shifted with respect to each other, both the wafers are stuck, so that for example, the crystal orientation <100> of the device-formation side wafer becomes identical to the crystal orientation <110> of the support-substrate side wafer 1. Then, the device-formation side wafer is divided as an SOI layer 3, and a MOS transistor TR1 or the like is formed in the SOI layer 3. |
