Self adjusting process for forming field effect transistors comprises a multiple step process in which a low ohmic connection metallization is finally applied to the source, drain and gate

摘要

Self adjusting process for forming field effect transistors comprises establishing the outer limit of a source and drain region on a substrate (1) using mesa etching, by depositing a dielectric layer (2) and self-adjusting removal of the layer from the mesa; forming a dummy gate (4) on the mesa to define a gate; laterally separating metal implants (5), contact implants (6) and gate (12) by shrink etching the dummy gate; inserting an implant in the source and drain region and producing a silicide; planarizing up to the upper surface of the dummy gate; etching the gate and inserting the gate; and applying a low ohmic connection metallization to the source, drain and gate. Preferred Features: The gate is a Schottky, MOS, MIS, MES or junction gate. The dielectric layer is made from a thermal oxide.