发明名称 |
Non-volatile memory device |
摘要 |
A non-volatile memory device including a plurality of block, each including: a main bit line; a plurality of sub-bit lines to which memory transistors are connected and which are arranged in parallel with respect to the main bit line; and two cascade-connected selection gates which are provided between the main bit line and sub-bit lines and which selectively connect the sub-bit lines.
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申请公布号 |
US6385088(B1) |
申请公布日期 |
2002.05.07 |
申请号 |
US19960599857 |
申请日期 |
1996.02.13 |
申请人 |
SONY CORPORATION |
发明人 |
ARAKAWA HIDEKI;TANAKA AKIRA;ARASE KENSHIRO;MIYASHITA MASARU |
分类号 |
G11C17/00;G11C7/18;G11C16/02;G11C16/04;G11C16/08;H01L21/8246;H01L27/112;H01L27/115;(IPC1-7):G11C16/04 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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