| 发明名称 |
Method for forming a structure using redeposition |
| 摘要 |
<p>A capacitor is formed by redepositing particles from a conductive layer (5) using a mask to form a well-shaped structure (27). A dielectric layer (30) is overlaid on the structure followed by a second conductive layer (35). <IMAGE> <IMAGE></p> |
| 申请公布号 |
EP1202331(A2) |
申请公布日期 |
2002.05.02 |
| 申请号 |
EP20010204492 |
申请日期 |
1996.02.21 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MCCLURE, BRENT A.;NEW, DARYL C. |
| 分类号 |
H01L21/8242;H01L21/02;H01L21/3213;H01L27/108;(IPC1-7):H01L21/02;H01L21/320;H01L21/321 |
主分类号 |
H01L21/8242 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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