| 摘要 |
PURPOSE: A projection lens is provided to be suitable for EUV-lithography with a wavelength in the range 10 - 30 nm and to simplify manufacturing processes. CONSTITUTION: The microlithographic projector lens for EUV-lithography includes a wavelength in the range 10 - 30 nm, an incident aperture diaphragm, and an emergent aperture diaphragm for the transformation of an object field in an object plane into an image field in an image plane. The microlithographic projector lens comprises a first, second, third, fourth, fifth, sixth, seventh and eighth mirrors(51¯58). A beam path from an object plane(100) to an image plane (102) is free from obscuration.
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