SLURRY USED IN POLISHING WAFER AND CHEMICAL MECHANICAL POLISHING METHOD USING THE SAME

摘要

PURPOSE: Slurry used in polishing a wafer is provided to easily control a chemical mechanical polishing(CMP) process and to guarantee a process margin, by improving a removal rate of a silicon oxide layer regarding a silicon nitride layer. CONSTITUTION: A plurality of polishing particles are suspended in a solution. A quaternary ammonium compound is added to the solution, having a type of �N-(R1R2R3R4)|�+X�-, wherein R1, R2, R3 and R4 are radicals and X�- is an anion derivative. The slurry includes at least one selected from a ground of silica, alumina, titania, zirconia, germania, ceria and a composition thereof.