发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To realize an air wiring structure, having high reliability by preventing wiring from being broken due to stress during a thermal process applied by a filming process. SOLUTION: At least a part of an insulation layer formed between the wirings of multi-layer wiring or between wiring layers, or between the wirings (for instance, first wirings 17, 17 and second wirings 31, 31) and between the wiring layers (the first and second wirings 17, 31) is formed by substance films (a first chained polymer film 13, a second chained polymer film 23 and a third chained polymer film 26) which is gasified at 300 deg.C or higher, after the multi- layer wiring (first and second wirings 17, 31) is formed, and an air wiring structure is formed by gasifying and removing a part formed by substance films (first, second and third chained polymer films 13, 23, 26) gasified at 300 deg.C or lower by heating processing.
申请公布号 JP2002110785(A) 申请公布日期 2002.04.12
申请号 JP20000293361 申请日期 2000.09.27
申请人 SONY CORP 发明人 KITO HIDEYOSHI
分类号 H01L23/522;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L23/522
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