| 发明名称 |
Method to produce data cell region and system region for semiconductor memory |
| 摘要 |
The present invention relates to a memory and an information apparatus and more specifically realizes a memory having large capacity through a simplified process and an information apparatus utilizing the same memory by generating the data cell region with a process that is different from the process used to generate the system region to control the data cells.
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| 申请公布号 |
US2002038876(A1) |
申请公布日期 |
2002.04.04 |
| 申请号 |
US20010006007 |
申请日期 |
2001.12.04 |
| 申请人 |
ARATANI KATSUHISA |
发明人 |
ARATANI KATSUHISA |
| 分类号 |
H01L27/10;G11C5/00;G11C11/36;G11C17/06;G11C17/10;H01L21/82;H01L21/8246;H01L27/088;H01L27/105;H01L27/112;H01L27/24;(IPC1-7):H01L21/82 |
主分类号 |
H01L27/10 |
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