| 摘要 |
The SVMR element has a non-magnetic metallic thin-film layer, first and second ferromagnetic thin-film layers (free and pinned layers) formed to sandwich the non-magnetic metallic thin-film layer and an anti-ferromagnetic thin-film layer formed in contact with a surface of the second ferromagnetic thin-film layer. This surface is opposite to the non-magnetic metallic thin-film layer. The first ferromagnetic thin-film layer has a two-layers structure of a NiFe layer and a CoFe layer. The manufacturing method includes a step of depositing the first ferromagnetic thin-film layer, the non-magnetic metallic thin-film layer, the second ferromagnetic thin-film layer and the anti-ferromagnetic thin-film layer, and a step of annealing, thereafter, the deposited layers so that change in magnetostriction depending upon variation of a thickness of the NiFe layer becomes small.
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