| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a barrier layer which is easy to carry out fine process, and to provide its manufacturing method. SOLUTION: A semiconductor device 100 has a capacitor 30 which comprises a lower electrode 32, a dielectric film 34 and an upper electrode 36. A barrier layer 50 containing AlOX as a main component is provided at least on the capacitor 30. The barrier layer 50 contains at least one kind selected from among TiOX, ZrOX, HfOX, SiOX and VOX. |
