| 摘要 |
PROBLEM TO BE SOLVED: To drastically reduce the defect density of a structure defect in a semiconductor layer, especially the dislocation density of through dislocation, without requiring complex processes, when forming a thin film such as GaN and a thick-film semiconductor layer on a substrate or the like made of each kind of material. SOLUTION: The method for forming a semiconductor layer on the substrate comprises a first step of generating a three-dimensional nucleus made of a semiconductor material crystal on the substrate with low nucleus density, and a second step of performing crystal growth of the three-dimensional nucleus generated on the substrate in a crosswise growth mode, fusing the three- dimension nucleus for forming a semiconductor layer made of a semiconductor substance crystal on the substrate. |
