发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE |
摘要 |
A power semiconductor device (10) has an active region that includes a drift region (20). At least a portion of the drift region (20) is provided in a membrane )16) which has opposed top and bottom surfaces (15, 17). In one embodiment, the top surface (15) of the membrane (16) has electrical termina ls connected directly or indirectly thereto to allow a voltage to be applied laterally across the drift region (20). In another embodiment, at least one electrical terminal is connected directly or indirectly to the top surface (15) and at least one electrical terminal is connected directly or indirectl y to the bottom surface (17) to allow a voltage to be applied vertically acros s the drift region (20). In each of these embodiments, the bottom surface (17) of the membrane (16) does not have a semiconductor substrate positioned adjacent thereto. |
申请公布号 |
CA2423028(A1) |
申请公布日期 |
2002.03.28 |
申请号 |
CA20012423028 |
申请日期 |
2001.09.20 |
申请人 |
CAMBRIDGE SEMICONDUCTOR LIMITED |
发明人 |
UDREA, FLORIN;AMARATUNGA, GEHAN ANIL JOSEPH |
分类号 |
H01L21/329;H01L21/331;H01L21/336;H01L21/76;H01L21/762;H01L21/764;H01L21/8234;H01L27/08;H01L27/088;H01L29/06;H01L29/08;H01L29/12;H01L29/20;H01L29/24;H01L29/32;H01L29/423;H01L29/739;H01L29/78;H01L29/786;H01L29/861 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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