| 摘要 |
PURPOSE: Data storage devices, which is related to a data storage device including a short-tolerant resistive cell cross point memory array. CONSTITUTION: The memory cells(12) are arranged in rows and columns, with the rows extending along an x-direction and the columns extending along a y-direction. Traces functioning as word lines(14) extend along the x-direction in a plane on one side of the memory cell array(10). Traces functioning as bit lines(16) extend along the y-direction in a plane on an opposite side of the memory cell array(10). There is one word line(14) for each row of the array(10) and one bit line(16) for each column of the array(10). Each memory cell(12) is located at a cross point of a corresponding word line(14) and bit line(16). The MRAM device(8) also includes a row decode circuit(18). During read operations, the row decode circuit(18) applies either a constant supply voltage (Vs) or a ground potential to the word lines(14). The constant supply voltage (Vs) is provided by an external circuit. The MRAM device(8) further includes a read circuit for sensing the resistance of selected memory cells(12) during read operations and a write circuit for orienting the magnetization of selected memory cells(12) during write operations.
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