| 摘要 |
PURPOSE: A method of making semiconductor laser diode is provided to easily carry out a step of forming a current blocking layer. CONSTITUTION: A method comprises sequentially forming a buffer layer(13), a lower clad layer(14), an active layer(15), an upper layer(16) and a cap layer(18) on a substrate(12). A mask is formed on a stacked structure, and a ridge is formed at a center thereof by etching both ends of the cap and upper clad layers by a predetermined depth. A current blocking layer(17) is formed on the upper clad and cap layers through an electron beam deposition method. Annealing is carried out at a resolution atmosphere for a predetermined time. After removing the mask, the first metal layer(20) and the second metal layer are formed on an upper part of the current blocking and cap layers and on a lower part of the substrate.
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