| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a flash memory element capable of improving reliability by accurately matching electric connection between a segment transistor and a memory cell area. SOLUTION: A primary impurity ion is injected on the upper face of a semiconductor board 60, the first source areas 68a, 68b and the first drain area 67 of the segment transistor are formed by self-alignment, a secondary impurity ion is injected on the upper face of the semiconductor board 60, a common bit line and a common source are formed, second source areas 73a, 73b and a second drain area 71 are formed respectively, and a connection structure between the segment transistor and the memory cell area of the flash memory element is manufactured. |
