发明名称 SEMICONDUCTOR DEVICE PROVIDED WITH MEMORY
摘要 PURPOSE: A semiconductor device provided with a memory is provided to stably maintain a ground potential even when a plurality of word lines are driven at one time. CONSTITUTION: A semiconductor device provided with a memory includes a pair of memory cell arrays(10a,10b) and a precharge controller(12). Two memory cell arrays(10a,10b) are connected to a row decoder. Each of the memory cell arrays(10a,10b) has a plurality of memory cells MC arranged in rows and columns. The memory cells MC are connected to word lines WL extending from the row decoder and bit lines BL. Each of the bit lines BL has a pair of bits over which read or write data D, /D is transferred. The memory cell arrays(10a,10b) are obtained by dividing a memory cell array into two. Thus, word lines WL which are precharged at one time are divided into two groups.
申请公布号 KR20020018107(A) 申请公布日期 2002.03.07
申请号 KR20010052457 申请日期 2001.08.29
申请人 FUJITSU LIMITED 发明人 FUJIOKA SHINYA;FUNYU AKIHIRO;MORI KATSUHIRO
分类号 G11C11/407;G11C8/08;G11C11/401;G11C29/06;G11C29/50;(IPC1-7):G11C11/407 主分类号 G11C11/407
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