| 摘要 |
A method for forming dielectric protection in different regions of a semiconductor device, in accordance with the present invention, includes forming structures in a first region and a second region. A dielectric layer is grown on surfaces of the structures and in between the structures in the first region and the second region. The dielectric layer is damaged in the second region to provide an altered layer which is etchable at a faster rate than the dielectric layer in the first region. The dielectric layer in the first region and the altered layer in the second region are etched to provide a dielectric protection layer having a first thickness in the first region and a second thickness in the second region.
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