| 摘要 |
A method for depositing a liner dielectric on a semiconductor substrate provides for sufficient adhesion of low dielectric constant spin-on materials among metal layers in sub-micron processes. In an example embodiment, a method for adhering MSQ provides for a liner oxide on an aluminum alloy layer on a semiconductor substrate. First, the substrate is placed into a PECVD environment. A gas mixture of trimethylsilane and N>2<O is introduced into the PECVD environment at a trimethylsilane-to-N>2<O ratio of about 1:20 to 1:30. The gas mixture is reacted to deposit an oxide liner of a predetermined thickness. Adjusting the gas mixture trimethylsilane-to-N>2<O ratio to about 1:3 to 1:7 over the course of about 5 to 20 seconds, and sustaining the reaction thereof, deposits a methyl doped oxide. |
