发明名称 |
Method of hot switching a plasma tuner |
摘要 |
<p>The present hot switching method and impedance matching circuit extends the tuning range of matching circuits to include increased power levels. The hot switching method and circuit includes coupling a controlled impedance network between an RF generator output and a plasma chamber input for matching impedances. The controlled impedance network includes an RF switch for switching a predetermined impedance. A device performance characteristic of the RF switch is determined. RF power is applied from the RF generator through the controlled impedance network to the plasma chamber. A signal characteristic of the impedance match is measured. The RF switch is controlled based upon the measured signal characteristic such that the impedance match is driven towards a predetermined matching range. The RF switch is switched any speed based upon the device performance characteristic. <IMAGE></p> |
申请公布号 |
EP1182686(A2) |
申请公布日期 |
2002.02.27 |
申请号 |
EP20010119867 |
申请日期 |
2001.08.16 |
申请人 |
ENI TECHNOLOGY, INC. |
发明人 |
HARNETT, SEAN O.;BROUNLEY, RICHARD W.;CHURCH, RICHARD E. |
分类号 |
H05H1/46;H01J37/32;H03H7/40;H05H1/36;(IPC1-7):H01J37/32 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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