发明名称 Method of hot switching a plasma tuner
摘要 <p>The present hot switching method and impedance matching circuit extends the tuning range of matching circuits to include increased power levels. The hot switching method and circuit includes coupling a controlled impedance network between an RF generator output and a plasma chamber input for matching impedances. The controlled impedance network includes an RF switch for switching a predetermined impedance. A device performance characteristic of the RF switch is determined. RF power is applied from the RF generator through the controlled impedance network to the plasma chamber. A signal characteristic of the impedance match is measured. The RF switch is controlled based upon the measured signal characteristic such that the impedance match is driven towards a predetermined matching range. The RF switch is switched any speed based upon the device performance characteristic. &lt;IMAGE&gt;</p>
申请公布号 EP1182686(A2) 申请公布日期 2002.02.27
申请号 EP20010119867 申请日期 2001.08.16
申请人 ENI TECHNOLOGY, INC. 发明人 HARNETT, SEAN O.;BROUNLEY, RICHARD W.;CHURCH, RICHARD E.
分类号 H05H1/46;H01J37/32;H03H7/40;H05H1/36;(IPC1-7):H01J37/32 主分类号 H05H1/46
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