发明名称 |
Method of fabricating a field emission device on the sidewalls of holes formed in an insulator layer |
摘要 |
A method of fabricating a field emission device is disclosed. A conductive layer is etched back by means of a reactive ion etching (RIE) process to form a chimney-shaped structure of diode-type or triode-type to serve as a field emitter. The field emission device of the present invention can be manufactured at a temperature of below 400° C., without complicated techniques or equipment, and is suitable for application in flat panel displays having large area.
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申请公布号 |
US6350628(B1) |
申请公布日期 |
2002.02.26 |
申请号 |
US20000482497 |
申请日期 |
2000.01.13 |
申请人 |
NATIONAL SCIENCE COUNCIL |
发明人 |
CHENG HUANG-CHUNG;HONG WEI KAI;TARNTAIR FU GOW |
分类号 |
H01J9/02;H01L21/00;H01L33/00;(IPC1-7):H01L21/00 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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