| 摘要 |
In the fabrication of a semiconductor laser emitting apparatus which emits laser beams having two different wavelengths, surface steps of the laminate film which is formed so as to cover the first semiconductor laser emitting device and constitutes the second semiconductor laser emitting device, is removed, so that processing with high precision is realized. A process for fabricating a semiconductor laser emitting apparatus comprising first and second semiconductor laser emitting devices, which are formed on a substrate and respectively emit laser beams having different wavelengths, the process comprising: stacking a ternary-system compound semiconductor on the substrate in a region in which the first semiconductor laser emitting device is to be formed, to thereby form a first laminate; forming a second laminate comprised of a quaternary-system compound semiconductor on the substrate so that the second laminate covers the first laminate; planarizing the surface of the second laminate so that the surface of the first laminate is exposed to the outside; forming current injection regions in the cladding layer; forming a current constriction region; and separating the first laminate from the second laminate, to thereby form a space between the laminates.
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