发明名称 Carrier substrate for producing semiconductor device
摘要 In order to improve adhesion between a plated film which functions as an external connection terminal of a semiconductor device and a surface of a resin protuberance and to improve reliability, a carrier substrate includes a metal substrate 12 which is shaped into a sheet form, to which a semiconductor chip is fixed, and which is removed before the semiconductor device is completed, a recess 16 formed at a position of the metal substrate 12 corresponding to the resin protuberance and having a rugged bottom surface 16a and/or a rugged side surface, and a plated film 14 formed on the inner surface of the recess 16.
申请公布号 US6348416(B1) 申请公布日期 2002.02.19
申请号 US19990455374 申请日期 1999.12.06
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD;FUJITSU LIMITED 发明人 TOYA HIDEKI;IMAI MITSUYOSHI;SAKAGUCHI MASAKI;YAMABE NAOKI;SUWA MAMORU;MOTOOKA TOSHIYUKI;SAKODA HIDEHARU;MORIOKA MUNEHARU
分类号 H01L23/12;H01L21/48;H01L21/56;H01L21/60;H01L21/68;H01L23/31;(IPC1-7):H01L21/311;H01L21/302 主分类号 H01L23/12
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