METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE AND ITS USE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxially grown semiconductor substrate which will not exhibit defects concerning the roughness of its epitaxially grown surface and the number of light-scattering centers and is suited for use of a substrate having defects detectable as oxygen deposits. SOLUTION: The semiconductor substrate manufacturing method comprises a step (a) of preparing a substrate having a polished front surface and a fixed thickness, a step (b) of pretreating the front surface of the substrate in an epitaxial reactor at 950-1,250 deg.C in the presence of gaseous HC1 and silane source, and a step (c) of depositing an epitaxial layer on the front surface of the pretreated substrate. The substrate has the front surface and the backside and a semiconductor material-made epitaxial layer which is deposited on the front surface.