| 摘要 |
<p>A method for the vapor phase deposition of a metal oxide dielectric film having a chemical formula represented by ABO3 and a perovskite crystal structure on a base metal using organic metal material gases and an oxidizing gas through the thermal chemical vapor deposition, which comprises a first step of supplying an organic Pb material gas alone or together with an oxidizing gas, prior to the formation of the metal oxide dielectric film, and a second step of supplying organic metal material and other gases required for forming the metal oxide dielectric film, to thereby form the metal oxide dielectric film. The method allows the growth of a film of PZT or the like being reduced in leakage current.</p> |
