发明名称 |
Solid state imaging device and method for manufacturing the same |
摘要 |
A charge storing layer of a photodiode having an N-type conductivity includes an N+-type additional implant area in the vicinity of a junction between the charge storing layer and an isolation region. The additional implant area provides an increase of stored charge and suppression of increase of the pulse voltage for a substrate shutter, and can be made to have a smaller width within a current design rule.
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申请公布号 |
US6346722(B1) |
申请公布日期 |
2002.02.12 |
申请号 |
US19990340127 |
申请日期 |
1999.06.28 |
申请人 |
NEC CORPORATION |
发明人 |
KAWAKAMI YUKIYA;TANABE AKIHITO;MUTOH NOBUHIKO |
分类号 |
H01L27/148;(IPC1-7):H01L27/148 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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