Formation of Quantum Dots

摘要

Formation of quantum dots (41) on a monocrystalline semiconductor substrate (40) involves gas-phase epitaxy of the quantum dot material on the substrate under optimum growth conditions to ensure growth at a controllable maximum rate. In an initial stage, quantum dot material gas is blown onto the substrate to provide a deposition rate distinctly higher than the controllable maximum rate. The substrate (40) material can be silicon (Si) and the quantum dot (41) material can be germanium (Ge). The substrate (40) material can be Si or Ge and the quantum dot (41) material can be a rare earth. The substrate material (40) can be silicon oxide and the quantum dot (41) material can be silicon nitride.