发明名称 High speed semiconductor memory device capable of changing data sequence for burst transmission
摘要 The present invention provides a semiconductor memory device capable of writing data into a memory area and reading data from the memory area, wherein the semiconductor memory device has a circuit for switching sequences of unit data comprising plural bytes to be consecutively transmitted as a unit for at least one of data write or read operations, so that, in accordance with a designated address of a memory area, a corresponding datum of the unit data to the designated address is first transmitted, followed by a consecutive transmission of remaining data in a predetermined basic cyclic sequence, whereby if any address of the memory area is designated, then the unit data comprising the plural bytes are consecutively transmitted as a unit without intervening any operation of switching word lines connected to the memory area.
申请公布号 US6345334(B1) 申请公布日期 2002.02.05
申请号 US19990225464 申请日期 1999.01.06
申请人 NEC CORPORATION 发明人 NAKAGAWA ATSUSHI;KATO YOSHIYUKI
分类号 G11C11/413;G06F12/08;G11C7/00;G11C7/10;G11C11/401;G11C11/407;G11C16/02;(IPC1-7):G06F12/00 主分类号 G11C11/413
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