发明名称 METHOD FOR AN IMPROVED DEVELOPING PROCESS IN WAFER PHOTOLITHOGRAPHY
摘要 Methods and apparatus are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. A method for achieving a more uniform, quasi-equilibrium succession of states from the introduction of developer chemical to the wafer surface to its removal is also described. The method reduces process-induced defects and improves critical dimension (CD) control.
申请公布号 WO0208832(A2) 申请公布日期 2002.01.31
申请号 WO2001US23470 申请日期 2001.07.25
申请人 SILICON VALLEY GROUP, INC.;PARK, JAE, HEON;BANG, JUNG, SUK 发明人 PARK, JAE, HEON;BANG, JUNG, SUK
分类号 G03F7/30;H01L21/027 主分类号 G03F7/30
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