| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device whose display characteristic is good. SOLUTION: The semiconductor device is provided with a peripheral circuit and an active matrix circuit. The peripheral circuit contains a plurality of thin-film transistors which contain crystalline semiconductor layers and gate electrodes facing any one side of the crystalline semiconductor layers via insulating films. The active matrix circuit contains a crystalline semiconductor layer, a first insulating film in contact with the face on one side of the crystalline semiconductor layer, a first gate electrode in contact with the first insulating film, a second insulating film in contact with the other side of the crystalline semiconductor layer, and a second gate electrode in contact with the second insulating film. The first gate electrode is electrically connected to the second gate electrode in each of a plurality of pixels. The peripheral circuit contains a first interconnection which is formed simultaneously with the first gate electrode.</p> |
