发明名称 |
IMPROVED GAN LIGHT EMITTING DIODE |
摘要 |
A GaN based LED comprises: a three layer buffer (11) which is a template for growth of a high quality I GaN platform for quality growth of subsequent layers; a light emitting structure (12); and complementary N and P electrode structures (115, 113) which spread current flowing between the electrodes fully across the light emitting structure (12).
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申请公布号 |
CA2414725(A1) |
申请公布日期 |
2002.01.31 |
申请号 |
CA20012414725 |
申请日期 |
2001.07.25 |
申请人 |
AMERICAN XTAL TECHNOLOGY, INC. |
发明人 |
CHEN, JOHN;LIANG, BINGWEN;SHIH, ROBERT |
分类号 |
H01L33/14;H01L33/30;H01L33/38;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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