| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to handle a wafer and divided semiconductor chips with good reliability when the wafer is divided, and to greatly increase the number of chips taken from the wafer. SOLUTION: A plurality of aluminum pads 2 and a passivation film 3 are formed on a silicon substrate 1 with circular outline. A resist 4 formed on the silicon substrate 1 is patterned. Trench holes 5 as ditches for dividing the wafer are formed by dry etching in the silicon substrate 1 with the resist 4 as a mask. After the resist 4 is removed, a back grinding tape 6 is put on the side of the aluminum pad 2 of the silicon substrate 1, and the rear of the silicon substrate 1 is ground and polished until it reaches the trench hole 5. In this way, the separation width of the semiconductor chip in the wafer can be made small, and the layout of semiconductor devices on the wafer can be carried out without consideration on the chipping by dicing.
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