发明名称 |
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure |
摘要 |
An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
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申请公布号 |
US2002008241(A1) |
申请公布日期 |
2002.01.24 |
申请号 |
US20010966789 |
申请日期 |
2001.09.28 |
申请人 |
EDMOND JOHN ADAM;KONG HUA-SHUANG;DOVERSPIKE KATHLEEN MARIE;LEONARD MICHELLE TURNER |
发明人 |
EDMOND JOHN ADAM;KONG HUA-SHUANG;DOVERSPIKE KATHLEEN MARIE;LEONARD MICHELLE TURNER |
分类号 |
H01L21/20;H01L33/00;(IPC1-7):H01L31/025;H01L31/031;H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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